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 KSD1621
KSD1621
High Current Driver Applications
* * * * Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB1121
1
SOT-89
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
1. Base 2. Collector 3. Emitter
Ratings 30 25 6 2 500 1.3 150 -55 ~ 150
Units V V V A mW W C C
* Mounted on Ceramic Board (250mm2x0.8mm)
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth product Output Capacitance * Turn On Time * Storage Time * Fall Time Test Condition IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=20V, IE=0 VBE=4V, IC=0 VCE=2V, IC=0.1A VCE=2V, IC=1.5A IC=1.5A, IB=75mA IC=1.5A, IB=75mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz VCC=12V, VBE=5V IB1= -IB2=25mA IC=0.5A, RL=25 100 65 0.18 0.85 150 19 60 500 25 Min. 30 25 6 100 100 560 0.4 1.2 V V MHz pF ns ns ns Typ. Max. Units V V V nA nA
* Pulse Width=20s, Duty Cycle1%
hFE Classification
Classification hFE R 100 ~ 200 Marking S 140 ~ 280 T 200 ~ 400 U 280 ~ 560
SYX
hFE grade
(c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KSD1621
Typical Characteristics
2.0
1000
IB = 50mA
IB = 30mA
IB = 20mA
VCE= 2V
IC[A], COLLECTOR CURRENT
1.6
hFE, DC CURRENT GAIN
IB = 10mA IB = 8mA IB = 6mA
0.8
100
1.2
IB = 4mA
0.4
10
IB = 2mA IB = 0
0.0 0.0
0.2
0.4
0.6
0.8
1.0
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
3.2
VCE(sat)[V], SATURATION VOLTAGE
IC = 10 IB
2.8
VCE = 2V
IC[A], COLLECTOR CURRENT
2.4
1
2.0
1.6
1.2
0.1
0.8
0.4
0.01 0.01
0.1
1
10
0.0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
1000
IE =0 f = 1MHz
VCE = 10V
Cob[pF], CAPACITANCE
100
100
10
1 0.1
10 0.1 1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD1621
Typical Characteristics (Continued)
10
1.6
IC MAX. (Pulse) IC MAX. (DC)
PC[W], POWER DISSIPATION
s m 10
s 1m
IC[A], COLLECTOR CURRENT
s 0m 10
1.2
ou M nt
1
ed on Ce ra ic m
0.8
a Bo rd 5 (2
0.1
0m
Ta=25 C Single Pulse Mounted on Ceramic Board 2 (250mm x 0.8mm)
o
m
0.4
No
2
Hea
x
t Sin
0.
k
m 8m )
0.01 0.1
0.0
1
10
100
0
50
o
100
150
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
Figure 7. Safe Operating Area
Figure 8. Power Derating
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD1621
Package Dimensions
SOT-89
4.50 0.20 1.65 0.10 C0.2
(0.50)
1.50 0.20 (0.40)
0.20
2.50
0.50 0.10 1.50 TYP 1.50 TYP
0.40 0.10 0.40 +0.10 -0.05
(1.10)
4.10
0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1


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